2SA1579T106R
- Mfr.Part #
- 2SA1579T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A UMT3
- Stock
- 520
- In Stock :
- 520
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Silver, Tin
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Breakdown Voltage :
- -120V
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- SC-70, SOT-323
- Published :
- 2001
- Voltage - Rated DC :
- -120V
- hFE Min :
- 180
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e1
- Max Collector Current :
- 50mA
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Current Rating :
- -50mA
- Peak Reflow Temperature (Cel) :
- 260
- VCEsat-Max :
- 0.5 V
- Pbfree Code :
- yes
- Power - Max :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Base Part Number :
- 2SA1579
- Continuous Collector Current :
- -50mA
- Gain Bandwidth Product :
- 140MHz
- Pin Count :
- 3
- Transistor Type :
- PNP
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 120V
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Datasheets
- 2SA1579T106R

PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SA1579T106R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at -50mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 120V volts.Device displays Collector Emitter Breakdown (120V maximal voltage).Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2SA1579T106R Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1579T106R Applications
There are a lot of ROHM Semiconductor
2SA1579T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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