2SA1577T106R
- Mfr.Part #
- 2SA1577T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A UMT3
- Stock
- 1,176
- In Stock :
- 1,176
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transition Frequency :
- 200MHz
- Pbfree Code :
- yes
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- VCEsat-Max :
- 0.4 V
- Number of Terminations :
- 3
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 32V
- Radiation Hardening :
- No
- hFE Min :
- 82
- Collector Emitter Voltage (VCEO) :
- 600mV
- Max Collector Current :
- 500mA
- Current Rating :
- -500mA
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -32V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Continuous Collector Current :
- -500mA
- Gain Bandwidth Product :
- 200MHz
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.75
- JESD-609 Code :
- e1
- Max Breakdown Voltage :
- 32V
- Contact Plating :
- Copper, Silver, Tin
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- 2SA1577
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Mount :
- Surface Mount
- Published :
- 2004
- Datasheets
- 2SA1577T106R
2SA1577T106R Documents

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SA1577T106R Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 500mA volts.
2SA1577T106R Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1577T106R Applications
There are a lot of ROHM Semiconductor
2SA1577T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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