2SA1576UBTLR
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- Mfr.Part #
- 2SA1576UBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A UMT3F
- Stock
- 50,161
- In Stock ：
- 50,161
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gain Bandwidth Product :
- 140MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -60V
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- 2SA1576
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 85
- Package / Case :
- SC-85
- Max Power Dissipation :
- 200mW
- Length :
- 2.1mm
- Published :
- 2010
- Max Collector Current :
- 150mA
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Max Frequency :
- 100MHz
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -150mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- -500mV
- Collector Emitter Voltage (VCEO) :
- 500mV
- Transistor Type :
- PNP
- Factory Lead Time :
- 10 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 1.35mm
- Emitter Base Voltage (VEBO) :
- -6V
- Mount :
- Surface Mount
- Datasheets
- 2SA1576UBTLR
2SA1576UBTLR Documents
PNP 150°C TJ 100nA ICBO PNP SC-85 Tape & Reel (TR) Surface Mount
2SA1576UBTLR Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SA1576UBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1576UBTLR Applications
There are a lot of ROHM Semiconductor
2SA1576UBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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