2PC4081S,115
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- Mfr.Part #
- 2PC4081S,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 50V 150MA SOT323
- Stock
- 35,850
- In Stock ：
- 35,850
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1mA 6V
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Max Collector Current :
- 150mA
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 270
- Collector Emitter Voltage (VCEO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Base Part Number :
- 2PC4081
- VCEsat-Max :
- 0.4 V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- 2PC4081S,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PC4081S,115 Overview
DC current gain in this device equals 270 @ 1mA 6V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2PC4081S,115 Features
the DC current gain for this device is 270 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2PC4081S,115 Applications
There are a lot of Nexperia USA Inc.
2PC4081S,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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