2PC4081Q,115
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- Mfr.Part #
- 2PC4081Q,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 50V 150MA SOT323
- Stock
- 12,036
- In Stock ：
- 12,036
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- VCEsat-Max :
- 0.4 V
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 150mA
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Base Part Number :
- 2PC4081
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 50V
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2PC4081Q,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PC4081Q,115 Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2PC4081Q,115 Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2PC4081Q,115 Applications
There are a lot of Nexperia USA Inc.
2PC4081Q,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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