2PC4081Q,115
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- Mfr.Part #
- 2PC4081Q,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 50V 150MA SOT323
- Stock
- 12,036
- In Stock ：
- 12,036
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Base Part Number :
- 2PC4081
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- VCEsat-Max :
- 0.4 V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 150mA
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Pin Count :
- 3
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Datasheets
- 2PC4081Q,115
2PC4081Q,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PC4081Q,115 Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2PC4081Q,115 Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2PC4081Q,115 Applications
There are a lot of Nexperia USA Inc.
2PC4081Q,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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