2PC4081R135
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- Mfr.Part #
- 2PC4081R135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PC4081 - SMALL SIG
- Stock
- 16,973
- In Stock ：
- 16,973
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.95
- VCEsat-Max :
- 0.4 V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 150mA
- Current - Collector (Ic) (Max) :
- 150mA
- Qualification Status :
- Not Qualified
- Base Part Number :
- 2PC4081
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transition Frequency :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 60V
- JESD-30 Code :
- R-PDSO-G3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Collector-Base Capacitance-Max :
- 3.5pF
- Terminal Form :
- Gull wing
- Datasheets
- 2PC4081R135
2PC4081R135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PC4081R,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
2PC4081R,135 Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2PC4081R,135 Applications
There are a lot of Nexperia USA Inc.
2PC4081R,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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