2PC1815Y,412
- Mfr.Part #
- 2PC1815Y,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 7,514
- In Stock :
- 7,514
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-PBCY-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- VCEsat-Max :
- 0.3 V
- Transition Frequency :
- 80MHz
- Collector-Base Capacitance-Max :
- 3.5pF
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 80MHz
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.95
- Transistor Type :
- NPN
- Power - Max :
- 500mW
- Power Dissipation-Max (Abs) :
- 0.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Published :
- 1996
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector (Ic) (Max) :
- 150mA
- Number of Elements :
- 1
- Base Part Number :
- 2PC1815
- Configuration :
- Single
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Datasheets
- 2PC1815Y,412
2PC1815Y,412 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Tube Through Hole
2PC1815Y,412 Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.80MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2PC1815Y,412 Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz
2PC1815Y,412 Applications
There are a lot of NXP USA Inc.
2PC1815Y,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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