2PC1815GR,412
- Mfr.Part #
- 2PC1815GR,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 6,404
- In Stock :
- 6,404
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 3.5pF
- Reach Compliance Code :
- Unknown
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 150mA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Frequency - Transition :
- 80MHz
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Number of Terminations :
- 3
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- O-PBCY-T3
- VCEsat-Max :
- 0.3 V
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 0.5W
- Transition Frequency :
- 80MHz
- HTS Code :
- 8541.21.00.95
- Base Part Number :
- 2PC1815
- Published :
- 1996
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2PC1815GR,412

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Tube Through Hole
2PC1815GR,412 Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.80MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2PC1815GR,412 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz
2PC1815GR,412 Applications
There are a lot of NXP USA Inc.
2PC1815GR,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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