2PC1815BL,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Transistor Type :

NPN

HTS Code :

8541.21.00.95

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Tape and Box (TB)

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

350 @ 2mA 6V

RoHS Status :

ROHS3 Compliant

VCEsat-Max :

0.3 V

JESD-609 Code :

e3

Transition Frequency :

80MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Transistor Element Material :

SILICON

Frequency - Transition :

80MHz

Current - Collector (Ic) (Max) :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

50V

Collector-Base Capacitance-Max :

3.5pF

Power Dissipation-Max (Abs) :

0.5W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Base Part Number :

2PC1815

Published :

1996

Surface Mount :

No

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Terminal Finish :

Matte Tin (Sn)

Power - Max :

500mW

JESD-30 Code :

O-PBCY-T3

Polarity/Channel Type :

NPN