2N7376
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- Mfr.Part #
- 2N7376
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 39,955
- In Stock ：
- 39,955
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology
- Product Category :
- Bipolar Transistors - BJT
- Vce Saturation (Max) @ Ib, Ic :
- -
- Series :
- -
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-254
- Subcategory :
- Transistors
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Manufacturer :
- Microchip
- Product Type :
- BJTs - Bipolar Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Current - Collector Cutoff (Max) :
- -
- Current - Collector (Ic) (Max) :
- 5 A
- Transistor Type :
- PNP
- Package / Case :
- TO-254-3, TO-254AA
- Power - Max :
- 58 W
- Package :
- Bulk
- Datasheets
- 2N7376
PNP -65°C ~ 200°C (TJ) - TO-254-3, TO-254AA Through Hole
2N7376 Overview
This device has a DC current gain of -, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-254.Detection of Collector Emitter Breakdown at 200 V maximal voltage is present.
2N7376 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-254
2N7376 Applications
There are a lot of Microchip Technology
2N7376 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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