2N7375
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- Mfr.Part #
- 2N7375
- Manufacturer
- Microchip Technology
- Package / Case
- TO-257-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 9,025
- In Stock ：
- 9,025
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- -
- Current - Collector (Ic) (Max) :
- 5 A
- Package / Case :
- TO-257-3
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Product Category :
- Bipolar Transistors - BJT
- Supplier Device Package :
- TO-257
- Vce Saturation (Max) @ Ib, Ic :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Series :
- -
- Brand :
- Microchip Technology
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
- Frequency - Transition :
- -
- Power - Max :
- 52.5 W
- Operating Temperature :
- -
- Subcategory :
- Transistors
- Datasheets
- 2N7375
PNP - - TO-257-3 Through Hole
2N7375 Overview
This device has a DC current gain of -, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-257.Detection of Collector Emitter Breakdown at 300 V maximal voltage is present.
2N7375 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-257
2N7375 Applications
There are a lot of Microchip Technology
2N7375 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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