2N7368

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

80 V

Configuration :

Single

RoHS :

Compliant

Max Operating Temperature :

200 °C

Pbfree Code :

No

Radiation Hardening :

No

Packaging :

Bulk

Product Status :

Active

Collector Emitter Voltage (VCEO) :

80 V

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

115 W

ECCN Code :

EAR99

Subcategory :

Other Transistors

Technology :

Si

Polarity/Channel Type :

NPN

Surface Mount :

No

Terminal Finish :

TIN LEAD

Collector-Emitter Voltage-Max :

80 V

Terminal Form :

PIN/PEG

Reach Compliance Code :

Unknown

Number of Pins :

3

Qualification Status :

Not Qualified

Max Power Dissipation :

115 W

DC Current Gain-Min (hFE) :

30

Number of Terminals :

3

Current - Collector (Ic) (Max) :

10 A

Collector Base Voltage (VCBO) :

80 V

JESD-30 Code :

S-MSFM-P3

Terminal Position :

Single

Package :

Bulk

JEDEC-95 Code :

TO-254AA

Power - Max :

115 W

Min Operating Temperature :

-65 °C

Max Collector Current :

10 A

Transistor Polarity :

NPN

Mounting Type :

Through Hole

JESD-609 Code :

e0

Package / Case :

TO-254-3, TO-254AA

Vce Saturation (Max) @ Ib, Ic :

1V @ 500mA, 5A

Mount :

Through Hole

Supplier Device Package :

TO-254AA

Pin Count :

3

Number of Elements :

1

Operating Temperature :

-65°C ~ 200°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1A, 2V

Collector Current-Max (IC) :

10 A

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

1mA

Manufacturer :

Microsemi Corporation

Frequency - Transition :

-

Package Shape :

Square

Peak Reflow Temperature (Cel) :

NOT SPECIFIED