2N7008-G

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Mfr.Part #
2N7008-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 230MA TO92-3
Stock
2,501
In Stock :
2,501

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
Microchip Technology / Atmel
Continuous Drain Current (ID) :
230mA
Minimum Operating Temperature :
-55 °C
Terminal Position :
BOTTOM
Channel Mode :
Enhancement
Gate-Source Voltage (Max) :
±30(V)
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Power Dissipation-Max (Abs) :
1 W
Feedback Cap-Max (Crss) :
5 pF
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Product Status :
Active
Height :
5.33mm
JESD-30 Code :
O-PBCY-W3
JEDEC-95 Code :
TO-92
Number of Terminals :
3
Number of Elements :
1
Package :
Bag
Type :
Power MOSFET
Series :
--
Contact Plating :
Tin
Reach Compliance Code :
Compliant
Qualification :
-
Base Product Number :
2N7008
JESD-609 Code :
e3
Continuous Drain Current :
0.23(A)
RoHS :
Details
Number of Elements per Chip :
1
Mounting :
Through Hole
FET Feature :
--
Rad Hardened :
No
Number of Channels :
1
Terminal Form :
Wire
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Package Shape :
Round
Operating Temperature Classification :
Military
Product Type :
MOSFET
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Vgs (Max) :
±30V
Power Dissipation (Max) :
1W (Tc)
Turn-Off Delay Time :
20 ns
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Width :
4.19mm
Factory Lead Time :
16 Weeks
Operating Temp Range :
-55C to 150C
DS Breakdown Voltage-Min :
60 V
Drain-source On Resistance-Max :
7.5 Ω
Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Product :
MOSFET Small Signal
Peak Reflow Temperature (Cel) :
Not Applicable
Element Configuration :
Single
Package Type :
TO-92
Maximum Operating Temperature :
+150 °C
Manufacturer :
Microchip
Length :
5.21mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Turn On Delay Time :
20 ns
Number of Terminations :
3
Qualification Status :
Not Qualified
Power Dissipation :
1W
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Power Dissipation-Max :
1W Tc
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current Id :
230
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
MSL :
-
FET Type :
N-Channel
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
60V
Channel Type :
N
Supplier Device Package :
TO-92-3
Drain to Source Voltage (Vdss) :
60V
Published :
2008
RoHS Status :
ROHS3 Compliant
Polarity :
N
Drain-Source On-Volt :
60(V)
Current - Continuous Drain (Id) @ 25°C :
230mA Tj
Polarity/Channel Type :
N-Channel
Weight :
453.59237mg
Radiation Hardening :
No
Mount :
Through Hole
Packaging :
Bulk
Datasheets
2N7008-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology 2N7008-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, 2N7008-G pinout, 2N7008-G datasheet PDF, 2N7008-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology 2N7008-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N7008-G


N-Channel Bulk 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)

2N7008-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 60 V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

2N7008-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)


2N7008-G Applications


There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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