2N7008

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Package :

Bag

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Number of Elements :

1

Drain-Source On-Volt :

60(V)

Turn-Off Delay Time :

20 ns

Qualification :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

453.59237mg

JEDEC-95 Code :

TO-92

Transistor Application :

SWITCHING

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Width :

4.19mm

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

DS Breakdown Voltage-Min :

60 V

Reach Compliance Code :

Compliant

Number of Terminals :

3

Series :

--

Terminal Form :

Wire

Power Dissipation (Max) :

1W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Contact Plating :

Tin

Surface Mount :

No

Channel Type :

N

Continuous Drain Current Id :

230

RoHS :

Details

Mount :

Through Hole

Packaging :

Bulk

Transistor Type :

1 N-Channel

Rad Hardened :

No

Package Type :

TO-92

Continuous Drain Current :

0.23(A)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

230mA Tj

Product :

MOSFET Small Signal

Supplier Device Package :

TO-92-3

Number of Terminations :

3

JESD-609 Code :

e3

Operating Temperature Classification :

Military

Continuous Drain Current (ID) :

230mA

Brand :

Microchip Technology / Atmel

Feedback Cap-Max (Crss) :

5 pF

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Polarity :

N

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

2N7008

Maximum Operating Temperature :

+150 °C

Minimum Operating Temperature :

-55 °C

Vgs (Max) :

±30V

Pin Count :

3

Published :

2008

Terminal Position :

BOTTOM

MSL :

-

Height :

5.33mm

Number of Pins :

3

Lead Free :

Lead Free

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation-Max :

1W Tc

Gate-Source Voltage (Max) :

±30(V)

Polarity/Channel Type :

N-Channel

Number of Elements per Chip :

1

Length :

5.21mm

Manufacturer :

Microchip

Package Shape :

Round

Transistor Polarity :

N-Channel

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

O-PBCY-W3

Operating Temp Range :

-55C to 150C

Drain-source On Resistance-Max :

7.5 Ω

Power Dissipation :

1W

Channel Mode :

Enhancement

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

1 W

FET Feature :

--

Product Status :

Active

Mounting :

Through Hole

Qualification Status :

Not Qualified

Type :

Power MOSFET

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Product Type :

MOSFET

Transistor Element Material :

SILICON