2N7002WT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

280mW

Rise Time :

9ns

Turn-Off Delay Time :

55.8 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Power Dissipation-Max :

280mW Tj

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

310mA

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

24.5pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Fall Time (Typ) :

9 ns

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

3

Published :

2009

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Pin Count :

3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Package / Case :

SC-70, SOT-323

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Turn On Delay Time :

12.2 ns

Number of Elements :

1