2N7002WT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Continuous Drain Current (ID) :

340mA

Power Dissipation-Max :

280mW Tj

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Resistance :

1.6Ohm

Vgs (Max) :

±20V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Power Dissipation :

280mW

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Lead Free :

Lead Free

Width :

1.35mm

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

55.8 ns

Factory Lead Time :

9 Weeks

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

24.5pF @ 20V

Radiation Hardening :

No

Fall Time (Typ) :

9 ns

Number of Terminations :

3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rise Time :

9ns

Nominal Vgs :

1 V

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Transistor Element Material :

SILICON

Height :

900μm

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

Pin Count :

3

ECCN Code :

EAR99

Number of Pins :

3

Number of Elements :

1

Turn On Delay Time :

12.2 ns

Length :

2.2mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Element Configuration :

Single

JESD-609 Code :

e3