2N7002W

Manufacturer :

YANGJIE

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Power Dissipation :

280mW

Resistance :

7.5Ohm

Number of Elements :

1

Element Configuration :

Single

Width :

1.25mm

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Terminations :

3

Length :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

310mA

Number of Pins :

3

Lead Free :

Lead Free

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

FET Type :

N-Channel

Published :

2008

Threshold Voltage :

1V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Height :

1.1mm

Number of Channels :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

7 pF

Power Dissipation-Max :

200mW Ta

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

55.8 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Weight :

30mg

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

12.2 ns

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Mount :

Surface Mount

Package / Case :

SC-70, SOT-323

Operating Mode :

ENHANCEMENT MODE