2N7002T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

11 ns

Height :

750μm

Current Rating :

115mA

Voltage - Rated DC :

60V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

5 pF

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

115mA

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Pin Count :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Width :

800μm

Number of Channels :

1

Package / Case :

SOT-523

Transistor Element Material :

SILICON

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Resistance :

7.5Ohm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Additional Feature :

High Reliability

Nominal Vgs :

2 V

RoHS Status :

ROHS3 Compliant

Published :

2009

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Weight :

2.012816mg

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Element Configuration :

Single

Power Dissipation :

150mW

Terminal Position :

Dual

Length :

1.6mm

Number of Pins :

3

Power Dissipation-Max :

150mW Ta

Turn On Delay Time :

7 ns

Factory Lead Time :

15 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Min Breakdown Voltage :

60V