2N7002T,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

JEDEC-95 Code :

TO-236AB

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

5Ohm

Feedback Cap-Max (Crss) :

10 pF

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

Unknown

Terminal Position :

Dual

Vgs (Max) :

±20V

Published :

2005

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.3A

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Power Dissipation-Max :

830mW Ta

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Number of Terminations :

3

Pin Count :

3

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount