2N7002PW,115
- Mfr.Part #
- 2N7002PW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 310MA SOT323
- Stock
- 544,951
- In Stock :
- 544,951
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Turn On Delay Time :
- 3 ns
- Fall Time (Typ) :
- 4 ns
- Rise Time :
- 4ns
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 0.8nC @ 4.5V
- Turn-Off Delay Time :
- 10 ns
- Published :
- 2010
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 310mA Ta
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 500mA, 10V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.4V @ 250μA
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 260mW Ta
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 310mA
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Surface Mount :
- yes
- Power Dissipation :
- 310mW
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- SC-70, SOT-323
- Resistance :
- 1.6Ohm
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N7002PW,115

N-Channel Tape & Reel (TR) 1.6 Ω @ 500mA, 10V ±20V 50pF @ 10V 0.8nC @ 4.5V SC-70, SOT-323
2N7002PW,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 60V.In addition to reducing power consumption, this device uses drive voltage (10V).
2N7002PW,115 Features
a continuous drain current (ID) of 310mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
2N7002PW,115 Applications
There are a lot of Nexperia USA Inc.
2N7002PW,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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