2N7002PW,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

1.6Ohm

Lead Free :

Lead Free

Number of Pins :

3

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Power Dissipation :

310mW

Turn-Off Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Radiation Hardening :

No

Contact Plating :

Tin

Transistor Application :

SWITCHING

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

Package / Case :

SC-70, SOT-323

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

3

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation-Max :

260mW Ta

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pin Count :

3

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Fall Time (Typ) :

4 ns

Turn On Delay Time :

3 ns

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

60V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Rise Time :

4ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

310mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE