2N7002PS115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

4 ns

Terminal Form :

Gull wing

Power Dissipation :

320mW

Pin Count :

6

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Number of Elements :

2

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Packaging :

Cut Tape (CT)

Surface Mount :

yes

Transistor Element Material :

SILICON

Contact Plating :

Tin

Rise Time :

4ns

Resistance :

1.6Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Turn On Delay Time :

3 ns

Published :

2010

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

320mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

150°C TJ

Power - Max :

420mW

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Radiation Hardening :

No

Max Dual Supply Voltage :

60V

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

10 ns

Factory Lead Time :

4 Weeks

Max Power Dissipation :

420mW

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)