2N7002PS115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Power Dissipation :

320mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4 ns

Number of Pins :

6

Operating Temperature :

150°C TJ

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Continuous Drain Current (ID) :

320mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Published :

2010

Power - Max :

420mW

Mounting Type :

Surface Mount

Turn-Off Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

3 ns

Factory Lead Time :

4 Weeks

Max Dual Supply Voltage :

60V

Transistor Element Material :

SILICON

Number of Terminations :

6

Rise Time :

4ns

Number of Elements :

2

Surface Mount :

yes

Max Power Dissipation :

420mW

Resistance :

1.6Ohm

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3