2N7002P,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

Turn-Off Delay Time :

10 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Fall Time (Typ) :

5 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Rise Time :

4ns

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Power Dissipation-Max :

350mW Ta

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

3 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

360mA Ta

Max Dual Supply Voltage :

60V

Transistor Application :

SWITCHING

Power Dissipation :

420mW

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Continuous Drain Current (ID) :

360mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Number of Elements :

1