2N7002LT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Published :

2007

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW

Height :

1.01mm

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Current - Continuous Drain (Id) @ 25°C :

115mA Tc

Mounting Type :

Surface Mount

Current Rating :

115A

Power Dissipation-Max :

225mW Ta

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Threshold Voltage :

2.5V

Element Configuration :

Single

Continuous Drain Current (ID) :

115mA

Number of Pins :

3

Lead Free :

Lead Free

Contact Plating :

Tin

REACH SVHC :

No SVHC

Pin Count :

3

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

5 pF

Terminal Position :

Dual

Radiation Hardening :

No

Width :

1.4mm

Halogen Free :

Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Length :

3.04mm

Voltage - Rated DC :

60V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Turn-Off Delay Time :

40 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2.5 V