2N7002K-T1-GE3
- Mfr.Part #
- 2N7002K-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 300MA TO236
- Stock
- 332,877
- In Stock :
- 332,877
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 500mA, 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Current :
- 3A
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 0.6nC @ 4.5V
- Number of Elements :
- 1
- Width :
- 1.4mm
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 2V
- Weight :
- 1.437803g
- Additional Feature :
- LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 1.12mm
- Length :
- 3.04mm
- Power Dissipation-Max :
- 350mW Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 190mA
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 35 ns
- Pbfree Code :
- yes
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Terminal Position :
- Dual
- Nominal Vgs :
- 2 V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 350mW
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- Factory Lead Time :
- 19 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Voltage :
- 60V
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Turn On Delay Time :
- 25 ns
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Series :
- TrenchFET®
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Resistance :
- 2Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 30pF @ 25V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Datasheets
- 2N7002K-T1-GE3

N-Channel Tape & Reel (TR) 2 Ω @ 500mA, 10V ±20V 30pF @ 25V 0.6nC @ 4.5V TO-236-3, SC-59, SOT-23-3
2N7002K-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 30pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 190mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
2N7002K-T1-GE3 Features
a continuous drain current (ID) of 190mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 35 ns
a threshold voltage of 2V
2N7002K-T1-GE3 Applications
There are a lot of Vishay Siliconix
2N7002K-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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