2N7002H-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

JESD-609 Code :

e3

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Drain Current-Max (Abs) (ID) :

0.17A

Terminal Form :

Gull wing

Number of Terminations :

3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

HTS Code :

8541.21.00.95

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

170mA

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed

Reference Standard :

AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

2N7002H-7

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 25V

DS Breakdown Voltage-Min :

60V

Published :

2013

Power Dissipation-Max :

370mW Ta

Number of Elements :

1

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ