2N7002F,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

830mW Ta

Mounting Type :

Surface Mount

Surface Mount :

yes

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

475mA Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Feedback Cap-Max (Crss) :

10 pF

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Published :

2006

Drain-source On Resistance-Max :

2Ohm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Continuous Drain Current (ID) :

475mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

0.475A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

0.69nC @ 10V

Operating Mode :

ENHANCEMENT MODE