2N7002F,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Number of Pins :

3

Published :

2006

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Drain-source On Resistance-Max :

2Ohm

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Feedback Cap-Max (Crss) :

10 pF

Power Dissipation-Max :

830mW Ta

HTS Code :

8541.21.00.75

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

475mA

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

0.69nC @ 10V

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

475mA Ta

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Surface Mount :

yes

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.475A