2N7002ET1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

2.5Ohm

Pin Count :

3

Width :

1.3mm

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Number of Pins :

3

Number of Terminations :

3

Published :

2007

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Nominal Vgs :

1 V

Turn On Delay Time :

1.7 ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Rise Time :

1.2ns

Length :

2.9mm

Pbfree Code :

yes

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

940μm

Terminal Form :

Gull wing

Surface Mount :

yes

Turn-Off Delay Time :

4.8 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

1.2 ns

Terminal Position :

Dual

Vgs (Max) :

±20V

Power Dissipation :

300mW

Gate Charge (Qg) (Max) @ Vgs :

0.81nC @ 5V

Continuous Drain Current (ID) :

310mA

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 240mA, 10V

Halogen Free :

Halogen Free

Threshold Voltage :

1V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.26A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300mW Tj

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

26.7pF @ 25V