2N7002E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Resistance :

3Ohm

Max Junction Temperature (Tj) :

150°C

Weight :

1.437803g

Lead Free :

Lead Free

Number of Pins :

3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

240mA Ta

Turn On Delay Time :

13 ns

Contact Plating :

Tin

Number of Elements :

1

Length :

3.04mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3 Ω @ 250mA, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

Vgs (Max) :

±20V

Number of Channels :

1

Continuous Drain Current (ID) :

240mA

Height :

1.12mm

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

18 ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pbfree Code :

yes

Width :

1.4mm

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

68V

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

21pF @ 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Power Dissipation :

350mW

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.24A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

350mW Ta