2N7002E
- Mfr.Part #
- 2N7002E
- Manufacturer
- Vishay
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 240MA SOT23-3
- Stock
- 91,792
- In Stock :
- 91,792
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Threshold Voltage :
- 2 V
- Input Capacitance :
- 40 pF
- REACH SVHC :
- No SVHC
- Manufacturer :
- Vishay Siliconix
- Power Dissipation-Max (Abs) :
- 0.35 W
- Drain to Source Voltage (Vdss) :
- 60 V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 60 V
- Max Operating Temperature :
- 150 °C
- Subcategory :
- FET General Purpose Power
- Nominal Vgs :
- 2 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 300 mA
- Min Operating Temperature :
- -55 °C
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20 V
- Drain Current-Max (Abs) (ID) :
- 0.25 A
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- No
- RoHS :
- Compliant
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Rds On Max :
- 3 Ω
- Surface Mount :
- yes
- Max Power Dissipation :
- 350 mW
- Drain to Source Resistance :
- 3 Ω
- Pin Count :
- 3
- Element Configuration :
- Single
- Datasheets
- 2N7002E
2N7002E Documents

60 V
2N7002E Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60 V.There is no drain current on this device since the maximum continuous current it can conduct is 0.25 A.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2 V.The transistor must receive a 60 V drain to source voltage (Vdss) in order to function.
2N7002E Features
a continuous drain current (ID) of 300 mA
a drain-to-source breakdown voltage of 60 V voltage
single MOSFETs transistor is 3 Ω
a threshold voltage of 2 V
a 60 V drain to source voltage (Vdss)
2N7002E Applications
There are a lot of NXP USA Inc.
2N7002E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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