2N7002E

Manufacturer :

ANBON SEMICONDUCTOR (INT'L) LIMITED

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

3 Ω

Drain to Source Breakdown Voltage :

60 V

Reach Compliance Code :

Unknown

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Surface Mount

Surface Mount :

yes

Number of Pins :

3

Manufacturer :

Vishay Siliconix

Configuration :

Single

Max Power Dissipation :

350 mW

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

3 Ω

Continuous Drain Current (ID) :

300 mA

Max Operating Temperature :

150 °C

Subcategory :

FET General Purpose Power

Gate to Source Voltage (Vgs) :

20 V

Drain Current-Max (Abs) (ID) :

0.25 A

Power Dissipation-Max (Abs) :

0.35 W

Pbfree Code :

No

Nominal Vgs :

2 V

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

60 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55 °C

RoHS :

Compliant

JESD-609 Code :

e0

REACH SVHC :

No SVHC

Threshold Voltage :

2 V

Element Configuration :

Single

Number of Channels :

1

Input Capacitance :

40 pF