2N7002CK,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PDSO-G3

Published :

2009

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.3A

Surface Mount :

yes

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Reference Standard :

IEC-60134

Power Dissipation-Max :

350mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

55pF @ 25V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

1.3nC @ 4.5V

FET Type :

N-Channel

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-236AB

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Feedback Cap-Max (Crss) :

7.5 pF

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Tin (Sn)

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Terminal Form :

Gull wing