2N7002BKMB,315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

715mW

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.45A

Factory Lead Time :

5 Weeks

Turn-Off Delay Time :

12 ns

Contact Plating :

Tin

FET Type :

N-Channel

Transistor Application :

SWITCHING

Fall Time (Typ) :

7 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 450mA, 10V

Number of Terminations :

3

Power Dissipation-Max :

360mW Ta

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Surface Mount :

yes

Max Dual Supply Voltage :

60V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Packaging :

Tape and Reel (TR)

Package / Case :

3-XFDFN

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Rise Time :

6ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

450mA

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE