2N7002BKM315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

715mW

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Continuous Drain Current (ID) :

450mA

Number of Pins :

3

Contact Plating :

Tin

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Power Dissipation-Max :

360mW Ta

Turn On Delay Time :

5 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Lead Free :

Lead Free

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Package / Case :

SC-101, SOT-883

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

60V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.45A

Turn-Off Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs (Max) :

±20V

JESD-609 Code :

e3

Fall Time (Typ) :

7 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Rise Time :

6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3