2N7002BKM315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

360mW Ta

Fall Time (Typ) :

7 ns

FET Type :

N-Channel

Turn On Delay Time :

5 ns

JESD-609 Code :

e3

Pin Count :

3

Factory Lead Time :

20 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mounting Type :

Surface Mount

Surface Mount :

yes

Radiation Hardening :

No

Case Connection :

DRAIN

Lead Free :

Lead Free

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

450mA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

715mW

Max Dual Supply Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Vgs (Max) :

±20V

Rise Time :

6ns

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Contact Plating :

Tin

Transistor Application :

SWITCHING

Published :

2010

Package / Case :

SC-101, SOT-883

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Turn-Off Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

0.45A