2N7002BK,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Published :

2010

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation-Max :

370mW Ta

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V