2N7002A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

540mW

Turn-Off Delay Time :

33 ns

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

6 Ω @ 115mA, 5V

Turn On Delay Time :

10 ns

Pin Count :

3

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Weight :

7.994566mg

Number of Terminations :

3

Number of Pins :

3

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Number of Channels :

1

ECCN Code :

EAR99

Additional Feature :

High Reliability

Terminal Position :

Dual

FET Type :

N-Channel

Length :

2.9mm

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Contact Plating :

Tin

Number of Elements :

1

Continuous Drain Current (ID) :

220mA

Height :

1mm

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Resistance :

6Ohm

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.3mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

370mW Ta

Lead Free :

Lead Free

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-609 Code :

e3

Mount :

Surface Mount