2N7002-T1-GE3
- Mfr.Part #
- 2N7002-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA TO236
- Stock
- 3,532
- In Stock :
- 3,532
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2N7002
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Weight :
- 1.437803g
- Feedback Cap-Max (Crss) :
- 5 pF
- Power Dissipation-Max :
- 200mW Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 115mA
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Terminal Form :
- Gull wing
- Datasheets
- 2N7002-T1-GE3

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3
2N7002-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
2N7002-T1-GE3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
2N7002-T1-GE3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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