2N7002-T1-E3
- Mfr.Part #
- 2N7002-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA TO236
- Stock
- 961
- In Stock :
- 961
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.437803g
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Feedback Cap-Max (Crss) :
- 5 pF
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Threshold Voltage :
- 2.1V
- Number of Channels :
- 1
- Additional Feature :
- LOW THRESHOLD
- Mount :
- Surface Mount
- Resistance :
- 7.5Ohm
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 2.1 V
- Height :
- 1.12mm
- Number of Pins :
- 3
- Width :
- 1.4mm
- Current :
- 15A
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- ECCN Code :
- EAR99
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Length :
- 3.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 200mW Ta
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 11 ns
- Turn On Delay Time :
- 7 ns
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 115mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- 2N7002-T1-E3

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-236-3, SC-59, SOT-23-3
2N7002-T1-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 115mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.1V threshold voltage. By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
2N7002-T1-E3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.1V
2N7002-T1-E3 Applications
There are a lot of Vishay Siliconix
2N7002-T1-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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