2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Product Status :
- Active
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- 1 N-Channel
- Mount :
- Surface Mount
- Continuous Drain Current Id :
- 115
- Length :
- 2.92mm
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 360mW
- Package Type :
- SOT-23
- Mounting Style :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Operating Temp Range :
- -55C to 150C
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Product Type :
- MOSFET
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Qualification :
- -
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Product :
- MOSFET Small Signal
- Polarity :
- N
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Base Product Number :
- 2N7002
- Brand :
- Microchip Technology / Atmel
- Operating Temperature :
- -55°C~150°C TJ
- Operating Temperature Classification :
- Military
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Weight :
- 1.437803g
- Number of Terminations :
- 3
- RoHS :
- Details
- Continuous Drain Current :
- 0.115(A)
- Power Dissipation (Max) :
- 360mW (Ta)
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 20 ns
- Series :
- --
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 115mA
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drain-Source On-Volt :
- 60(V)
- Manufacturer :
- Microchip
- Mounting :
- Surface Mount
- Contact Plating :
- Tin
- Gate-Source Voltage (Max) :
- ±30(V)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Turn On Delay Time :
- 20 ns
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Transistor Polarity :
- N-Channel
- Height :
- 1.12mm
- Type :
- Power MOSFET
- Feedback Cap-Max (Crss) :
- 5 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mounting Type :
- Surface Mount
- Ambient Temperature Range High :
- 150°C
- Rad Hardened :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Mode :
- ENHANCEMENT MODE
- Channel Type :
- N Channel
- Number of Channels :
- 1
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 360mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Number of Elements :
- 1
- MSL :
- -
- Datasheets
- 2N7002-G
2N7002-G Documents

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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