2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 115MA SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current :
- 0.115(A)
- Mounting Style :
- SMD/SMT
- Published :
- 2013
- Mounting :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- Factory Lead Time :
- 14 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Operating Temp Range :
- -55C to 150C
- Minimum Operating Temperature :
- - 55 C
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Continuous Drain Current Id :
- 115
- Continuous Drain Current (ID) :
- 115mA
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Brand :
- Microchip Technology / Atmel
- Number of Pins :
- 3
- Drain-Source On-Volt :
- 60(V)
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Gate-Source Voltage (Max) :
- ±30(V)
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Rad Hardened :
- No
- Power Dissipation :
- 360mW
- Type :
- Power MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Base Product Number :
- 2N7002
- Mount :
- Surface Mount
- Qualification :
- -
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Product :
- MOSFET Small Signal
- Transistor Element Material :
- SILICON
- Length :
- 2.92mm
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Package Type :
- SOT-23
- Power Dissipation (Max) :
- 360mW (Ta)
- Number of Terminations :
- 3
- Manufacturer :
- Microchip
- RoHS :
- Details
- Operating Temperature Classification :
- Military
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Height :
- 1.12mm
- Terminal Form :
- Gull wing
- Channel Mode :
- Enhancement
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation-Max :
- 360mW Ta
- Weight :
- 1.437803g
- Feedback Cap-Max (Crss) :
- 5 pF
- Polarity :
- N
- Series :
- --
- Channel Type :
- N Channel
- Turn-Off Delay Time :
- 20 ns
- FET Feature :
- --
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- MSL :
- -
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- 60V
- Turn On Delay Time :
- 20 ns
- Terminal Position :
- Dual
- Ambient Temperature Range High :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Datasheets
- 2N7002-G

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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