2N7002-G

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Mfr.Part #
2N7002-G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
FET 60V 5.0 OHM SOT23
Stock
798,028
In Stock :
798,028

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
115mA Tj
JESD-609 Code :
e3
Vgs (Max) :
±30V
Drain-Source On-Volt :
60(V)
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Number of Channels :
1
FET Feature :
--
Base Product Number :
2N7002
FET Type :
N-Channel
Operating Temp Range :
-55C to 150C
Type :
Power MOSFET
Manufacturer :
Microchip
Additional Feature :
HIGH INPUT IMPEDANCE
ECCN Code :
EAR99
Element Configuration :
Single
Power Dissipation-Max :
360mW Ta
Contact Plating :
Tin
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Configuration :
Single
Drain to Source Voltage (Vdss) :
60V
Continuous Drain Current Id :
115
Channel Type :
N Channel
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
14 Weeks
Supplier Device Package :
SOT-23 (TO-236AB)
Feedback Cap-Max (Crss) :
5 pF
Radiation Hardening :
No
Product Type :
MOSFET
Qualification :
-
Lead Free :
Lead Free
Package Type :
SOT-23
Published :
2013
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Weight :
1.437803g
Mounting Type :
Surface Mount
Width :
1.3mm
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
20 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Maximum Operating Temperature :
+ 150 C
Polarity :
N
Transistor Application :
SWITCHING
Operating Temperature Classification :
Military
Transistor Element Material :
SILICON
MSL :
-
Length :
2.92mm
Channel Mode :
Enhancement
Product Status :
Active
Rad Hardened :
No
Continuous Drain Current :
0.115(A)
Height :
1.12mm
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Pin Count :
3
Power Dissipation (Max) :
360mW (Ta)
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Series :
--
Mounting :
Surface Mount
Number of Elements :
1
Number of Terminations :
3
Gate-Source Voltage (Max) :
±30(V)
Product :
MOSFET Small Signal
Drain to Source Breakdown Voltage :
60V
Terminal Position :
Dual
Terminal Form :
Gull wing
Ambient Temperature Range High :
150°C
Continuous Drain Current (ID) :
115mA
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
Power Dissipation :
360mW
Peak Reflow Temperature (Cel) :
260
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Minimum Operating Temperature :
- 55 C
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
RoHS :
Details
Turn On Delay Time :
20 ns
Brand :
Microchip Technology / Atmel
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
2N7002-G
Introducing Transistors - FETs, MOSFETs - Single onsemi 2N7002-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, 2N7002-G pinout, 2N7002-G datasheet PDF, 2N7002-G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 2N7002-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N7002-G


N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3

2N7002-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

2N7002-G Features


a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)


2N7002-G Applications


There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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