2N7002-G
- Mfr.Part #
- 2N7002-G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- FET 60V 5.0 OHM SOT23
- Stock
- 798,028
- In Stock :
- 798,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Tj
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Drain-Source On-Volt :
- 60(V)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Channels :
- 1
- FET Feature :
- --
- Base Product Number :
- 2N7002
- FET Type :
- N-Channel
- Operating Temp Range :
- -55C to 150C
- Type :
- Power MOSFET
- Manufacturer :
- Microchip
- Additional Feature :
- HIGH INPUT IMPEDANCE
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Power Dissipation-Max :
- 360mW Ta
- Contact Plating :
- Tin
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 60V
- Continuous Drain Current Id :
- 115
- Channel Type :
- N Channel
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Feedback Cap-Max (Crss) :
- 5 pF
- Radiation Hardening :
- No
- Product Type :
- MOSFET
- Qualification :
- -
- Lead Free :
- Lead Free
- Package Type :
- SOT-23
- Published :
- 2013
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Weight :
- 1.437803g
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 20 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Maximum Operating Temperature :
- + 150 C
- Polarity :
- N
- Transistor Application :
- SWITCHING
- Operating Temperature Classification :
- Military
- Transistor Element Material :
- SILICON
- MSL :
- -
- Length :
- 2.92mm
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Rad Hardened :
- No
- Continuous Drain Current :
- 0.115(A)
- Height :
- 1.12mm
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Pin Count :
- 3
- Power Dissipation (Max) :
- 360mW (Ta)
- Transistor Type :
- 1 N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Series :
- --
- Mounting :
- Surface Mount
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Gate-Source Voltage (Max) :
- ±30(V)
- Product :
- MOSFET Small Signal
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Ambient Temperature Range High :
- 150°C
- Continuous Drain Current (ID) :
- 115mA
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Power Dissipation :
- 360mW
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS :
- Details
- Turn On Delay Time :
- 20 ns
- Brand :
- Microchip Technology / Atmel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N7002-G

N-Channel Tape & Reel (TR) 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002-G Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
a 60V drain to source voltage (Vdss)
2N7002-G Applications
There are a lot of Microchip Technology
2N7002-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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