2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET, SOT-23, 60V, 0.28A, N, 0
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Current Rating :
- 115mA
- Drain to Source Voltage (Vdss) :
- 60V
- Rds On Max :
- 7.5 Ω
- Base Part Number :
- 2N7002
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 1.2Ohm
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Continuous Drain Current (ID) :
- 115mA
- Power Dissipation-Max :
- 200mW Ta
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Mount :
- Surface Mount
- Width :
- 3.05mm
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 930μm
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Length :
- 2.92mm
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 50pF
- Min Operating Temperature :
- -55°C
- Voltage :
- 60V
- Current :
- 115mA
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 2.1 V
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.1V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Resistance :
- 5.3Ohm
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Published :
- 2016
- Voltage - Rated DC :
- 60V
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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