2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CH MOSFET 60V 0.34A SOT-23-3L
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Rds On Max :
- 7.5 Ω
- Current Rating :
- 115mA
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 2.1V
- Drain to Source Voltage (Vdss) :
- 60V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Dual Supply Voltage :
- 60V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 115mA
- Width :
- 3.05mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Voltage - Rated DC :
- 60V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Resistance :
- 5.3Ohm
- Factory Lead Time :
- 8 Weeks
- Nominal Vgs :
- 2.1 V
- Element Configuration :
- Single
- Length :
- 2.92mm
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- Height :
- 930μm
- Input Capacitance :
- 50pF
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Resistance :
- 1.2Ohm
- Number of Elements :
- 1
- Current :
- 115mA
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage :
- 60V
- Power Dissipation-Max :
- 200mW Ta
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Base Part Number :
- 2N7002
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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