2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA SOT23-3
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Current :
- 115mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Nominal Vgs :
- 2.1 V
- Width :
- 3.05mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 60V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Base Part Number :
- 2N7002
- Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- Drain to Source Resistance :
- 1.2Ohm
- Published :
- 2016
- Vgs (Max) :
- ±20V
- Length :
- 2.92mm
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Threshold Voltage :
- 2.1V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 200mW Ta
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Height :
- 930μm
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 7.5 Ω
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 50pF
- Resistance :
- 5.3Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Element Configuration :
- Single
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Current Rating :
- 115mA
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 60V
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Voltage :
- 60V
- Continuous Drain Current (ID) :
- 115mA
- Datasheets
- 2N7002
2N7002 Documents

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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