2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 115MA SOT23
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Max Operating Temperature :
- 150°C
- Base Part Number :
- 2N7002
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 60V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID) :
- 115mA
- Contact Plating :
- Tin
- Width :
- 3.05mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation-Max :
- 200mW Ta
- Vgs (Max) :
- ±20V
- Current Rating :
- 115mA
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation :
- 200mW
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- FET Type :
- N-Channel
- Input Capacitance :
- 50pF
- Number of Pins :
- 3
- Threshold Voltage :
- 2.1V
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Nominal Vgs :
- 2.1 V
- Height :
- 930μm
- Voltage - Rated DC :
- 60V
- Dual Supply Voltage :
- 60V
- Published :
- 2016
- Lead Free :
- Lead Free
- Resistance :
- 5.3Ohm
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Length :
- 2.92mm
- Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 1.2Ohm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 7.5 Ω
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Current :
- 115mA
- Mount :
- Surface Mount
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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