2N7000TA
- Mfr.Part #
- 2N7000TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 28,943
- In Stock :
- 28,943
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 9 Weeks
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Continuous Drain Current (ID) :
- 200mA
- Manufacturer Package Identifier :
- TO-92 3L
- Turn-Off Delay Time :
- 10 ns
- Packaging :
- Tape and Box (TB)
- Contact Plating :
- Copper, Silver, Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 10 ns
- Resistance :
- 5Ohm
- Threshold Voltage :
- 3.9V
- Number of Pins :
- 3
- Height :
- 5.33mm
- Base Part Number :
- 2N7000
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 60V
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 200mA
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 400mW Ta
- Lead Free :
- Lead Free
- Power Dissipation :
- 400mW
- Length :
- 5.2mm
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Rise Time :
- 10ns
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- Width :
- 4.19mm
- Datasheets
- 2N7000TA

N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N7000TA Description
These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.
2N7000TA Features
? Low RDS High Density Cell Design (ON)
? Switches with voltage control for small signals
? Tough and Dependable
? High Current Saturation Capability
2N7000TA Applications
Switching applications
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