2N7000TA

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Mfr.Part #
2N7000TA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
MOSFET N-CH 60V 200MA TO92-3
Stock
28,943
In Stock :
28,943

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
9 Weeks
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Continuous Drain Current (ID) :
200mA
Manufacturer Package Identifier :
TO-92 3L
Turn-Off Delay Time :
10 ns
Packaging :
Tape and Box (TB)
Contact Plating :
Copper, Silver, Tin
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
10 ns
Resistance :
5Ohm
Threshold Voltage :
3.9V
Number of Pins :
3
Height :
5.33mm
Base Part Number :
2N7000
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
60V
REACH SVHC :
No SVHC
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Current Rating :
200mA
Drain to Source Breakdown Voltage :
60V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type :
Through Hole
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Power Dissipation-Max :
400mW Ta
Lead Free :
Lead Free
Power Dissipation :
400mW
Length :
5.2mm
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
0.2A
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Rise Time :
10ns
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
3V @ 1mA
Number of Elements :
1
Turn On Delay Time :
10 ns
Width :
4.19mm
Datasheets
2N7000TA
Introducing Transistors - FETs, MOSFETs - Single onsemi 2N7000TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2N7000, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, 2N7000TA pinout, 2N7000TA datasheet PDF, 2N7000TA amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 2N7000TA ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N7000TA


N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

2N7000TA Description


These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.



2N7000TA Features


? Low RDS High Density Cell Design (ON)


? Switches with voltage control for small signals


? Tough and Dependable


? High Current Saturation Capability



2N7000TA Applications


Switching applications


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