2N7000RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Box (TB)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

200mA

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Published :

2007

Drain Current-Max (Abs) (ID) :

0.2A

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

60V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Feedback Cap-Max (Crss) :

5 pF

Power Dissipation :

350mW

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Current Rating :

200mA

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

5Ohm

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Pin Count :

3

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Power Dissipation-Max :

350mW Tc

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

3V @ 1mA

Turn-Off Delay Time :

10 ns