2N7000RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.2A

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

200mA

Packaging :

Tape and Box (TB)

Surface Mount :

No

Feedback Cap-Max (Crss) :

5 pF

Transistor Element Material :

SILICON

Pin Count :

3

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Vgs(th) (Max) @ Id :

3V @ 1mA

Current Rating :

200mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Pbfree Code :

yes

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e1

Voltage - Rated DC :

60V

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

5Ohm

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Lead Free :

Lead Free

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Power Dissipation-Max :

350mW Tc

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE