2N7000G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max (Abs) :

1 W

Length :

5.21mm

JEDEC-95 Code :

TO-92

Channel Mode :

Enhancement

Pin Count :

3

Number of Elements :

1

REACH SVHC :

No SVHC

Current Rating :

200mA

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+150 °C

Number of Terminations :

3

Width :

4.19mm

Power Dissipation (Max) :

1W (Tc)

Series :

--

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

0.2A

Gate to Source Voltage (Vgs) :

30V

Manufacturer :

Microchip

JESD-30 Code :

O-PBCY-T3

Continuous Drain Current :

0.2(A)

RoHS Status :

ROHS3 Compliant

Package Shape :

Round

Drain to Source Voltage (Vdss) :

60V

Drain to Source Breakdown Voltage :

60V

Brand :

Microchip Technology / Atmel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Surface Mount :

No

Lead Free :

Lead Free

Package :

Bag

Operating Temp Range :

-55C to 150C

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Packaging :

Bulk

Drain-source On Resistance-Max :

5Ohm

Transistor Type :

1 N-Channel

Operating Temperature Classification :

Military

Transistor Application :

SWITCHING

Power Dissipation :

1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60 V

Peak Reflow Temperature (Cel) :

Not Applicable

Polarity :

N

ECCN Code :

EAR99

Type :

Power MOSFET

Feedback Cap-Max (Crss) :

5 pF

Drain-Source On-Volt :

60(V)

Mount :

Through Hole

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting :

Through Hole

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-92-3

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

1W Tc

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Voltage - Rated DC :

60V

Continuous Drain Current Id :

200

Product Status :

Active

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

10 ns

Published :

2008

Product Type :

MOSFET

Mounting Style :

Through Hole

Channel Type :

N

Rad Hardened :

No

Terminal Finish :

Matte Tin (Sn)

MSL :

-

FET Feature :

--

Threshold Voltage :

800mV

Minimum Operating Temperature :

-55 °C

Number of Terminals :

3

Contact Plating :

Tin

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Base Product Number :

2N7000

Gate-Source Voltage (Max) :

±30(V)

Element Configuration :

Single

RoHS :

Details

Vgs(th) (Max) @ Id :

3V @ 1mA

Vgs (Max) :

±30V

Additional Feature :

HIGH INPUT IMPEDANCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

6 Weeks

Product Category :

MOSFET

Height :

5.334mm

Configuration :

Single

Turn On Delay Time :

10 ns

Package Type :

TO-92

Continuous Drain Current (ID) :

200mA

Number of Elements per Chip :

1

Qualification :

-

Weight :

453.59237mg

Terminal Position :

BOTTOM