2N7000G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

800mV

Length :

5.21mm

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Number of Channels :

1

Package :

Bag

Type :

Power MOSFET

Continuous Drain Current :

0.2(A)

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Turn On Delay Time :

10 ns

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Rad Hardened :

No

Drain-Source On-Volt :

60(V)

Maximum Operating Temperature :

+150 °C

Width :

4.19mm

Operating Temp Range :

-55C to 150C

Reach Compliance Code :

Compliant

Vgs (Max) :

±30V

Minimum Operating Temperature :

-55 °C

FET Type :

N-Channel

Voltage - Rated DC :

60V

Contact Plating :

Tin

Package Type :

TO-92

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

JESD-30 Code :

O-PBCY-T3

Series :

--

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

10 ns

Additional Feature :

HIGH INPUT IMPEDANCE

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Mounting :

Through Hole

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Product Type :

MOSFET

Channel Type :

N

Manufacturer :

Microchip

Number of Terminations :

3

RoHS :

Details

Feedback Cap-Max (Crss) :

5 pF

Weight :

453.59237mg

Transistor Element Material :

SILICON

Qualification :

-

Packaging :

Bulk

Power Dissipation-Max (Abs) :

1 W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Type :

1 N-Channel

Factory Lead Time :

6 Weeks

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature Classification :

Military

Transistor Polarity :

N-Channel

Polarity :

N

Pin Count :

3

Continuous Drain Current Id :

200

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Radiation Hardening :

No

Product Status :

Active

Continuous Drain Current (ID) :

200mA

Drain to Source Voltage (Vdss) :

60V

MSL :

-

Surface Mount :

No

Lead Free :

Lead Free

Power Dissipation-Max :

1W Tc

Number of Elements per Chip :

1

JEDEC-95 Code :

TO-92

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Height :

5.334mm

Number of Terminals :

3

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.2A

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Power Dissipation (Max) :

1W (Tc)

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60 V

Gate-Source Voltage (Max) :

±30(V)

Supplier Device Package :

TO-92-3

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Finish :

Matte Tin (Sn)

Base Product Number :

2N7000

Current Rating :

200mA

Package Shape :

Round

Number of Pins :

3

Published :

2008

Drain-source On Resistance-Max :

5Ohm

Brand :

Microchip Technology / Atmel

Element Configuration :

Single

Qualification Status :

Not Qualified