2N6667

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 3V

Number of Pins :

3

Number of Terminations :

3

Height :

15.75mm

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

2V

Mounting Type :

Through Hole

Max Power Dissipation :

2W

Published :

2007

Width :

4.83mm

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

3V @ 100mA, 10A

Base Part Number :

2N6667

Surface Mount :

No

Lead Free :

Lead Free

Pbfree Code :

yes

Pin Count :

3

Package / Case :

TO-220-3

Transistor Type :

PNP - Darlington

Factory Lead Time :

2 Weeks

Power Dissipation :

2W

Continuous Collector Current :

10A

Current Rating :

-10A

ECCN Code :

EAR99

Max Collector Current :

10A

Current - Collector Cutoff (Max) :

1mA

Collector Emitter Voltage (VCEO) :

60V

Voltage - Rated DC :

-60V

Element Configuration :

Single

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

1000

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

60V

JEDEC-95 Code :

TO-220AB

Transistor Application :

AMPLIFIER

Packaging :

Tube

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Weight :

6.000006g

Peak Reflow Temperature (Cel) :

260

Length :

10.53mm

Transistor Element Material :

SILICON