2N6660

Manufacturer :

Solid State Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

6.25W (Tc)

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Voltage :

60V

Power Dissipation-Max (Abs) :

6.25 W

Polarity/Channel Type :

N-Channel

Mounting :

Through Hole

Package / Case :

TO-205AD, TO-39-3 Metal Can

JEDEC-95 Code :

TO-39

Min Operating Temperature :

-55°C

Drain Current-Max (Abs) (ID) :

2 A

Drain-Source On-Volt :

60(V)

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Number of Pins :

3

Operating Temperature Classification :

Military

Turn On Delay Time :

10 ns

Terminal Finish :

NICKEL GOLD

Drain-source On Resistance-Max :

3 Ω

Brand :

Microchip Technology / Atmel

Current :

11A

Package :

Bag

Drain to Source Resistance :

3Ohm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Surface Mount :

No

Additional Feature :

HIGH INPUT IMPEDANCE

Terminal Form :

Wire

Continuous Drain Current Id :

410

Product Status :

Active

Contact Plating :

Gold

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

10 ns

Power Dissipation-Max :

6.25W Tc

Series :

--

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Number of Elements :

1

Input Capacitance :

50pF

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

FET Feature :

--

DS Breakdown Voltage-Min :

60 V

Number of Terminals :

3

Packaging :

Bulk

Vgs(th) (Max) @ Id :

2V @ 1mA

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Package Type :

TO-39

Operating Temp Range :

-55C to 150C

Package Shape :

Round

Mount :

Through Hole

Product Category :

MOSFET

JESD-609 Code :

e4

Transistor Polarity :

N-Channel

Power Dissipation :

6.25W

Type :

Power MOSFET

Continuous Drain Current :

0.41(A)

JESD-30 Code :

O-MBCY-W3

Rds On Max :

3 Ω

RoHS :

Details

Element Configuration :

Single

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

10 pF

Supplier Device Package :

TO-39

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Gate-Source Voltage (Max) :

±20(V)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Rad Hardened :

No

Configuration :

Single

Continuous Drain Current (ID) :

410mA

Polarity :

N

Subcategory :

MOSFETs

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

HTS Code :

8541.90.00.00

Manufacturer :

Microchip

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Published :

2011

FET Type :

N-Channel

Number of Channels :

1