2N6660

Manufacturer :

Solid State Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

RoHS Status :

Non-RoHS Compliant

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

6.25W

Turn On Delay Time :

10 ns

Mount :

Through Hole

Gate-Source Voltage (Max) :

±20(V)

Polarity :

N

Surface Mount :

No

Package Shape :

Round

Package :

Bag

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Published :

2011

FET Type :

N-Channel

Element Configuration :

Single

JESD-30 Code :

O-MBCY-W3

Pin Count :

3

Operating Temperature Classification :

Military

HTS Code :

8541.90.00.00

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Package / Case :

TO-205AD, TO-39-3 Metal Can

Product Category :

MOSFET

Terminal Form :

Wire

Transistor Application :

SWITCHING

Number of Terminals :

3

Drain to Source Resistance :

3Ohm

Operating Temperature :

-55°C~150°C TJ

Series :

--

RoHS :

Details

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-39

ECCN Code :

EAR99

Brand :

Microchip Technology / Atmel

DS Breakdown Voltage-Min :

60 V

Packaging :

Bulk

Radiation Hardening :

No

Package Type :

TO-39

Terminal Finish :

NICKEL GOLD

Additional Feature :

HIGH INPUT IMPEDANCE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current :

0.41(A)

Manufacturer :

Microchip

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

6.25 W

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Turn-Off Delay Time :

10 ns

Drain-Source On-Volt :

60(V)

Operating Temp Range :

-55C to 150C

Number of Channels :

1

Case Connection :

DRAIN

Voltage :

60V

Contact Plating :

Gold

Rds On Max :

3 Ω

Power Dissipation-Max :

6.25W Tc

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

3 Ω

Continuous Drain Current (ID) :

410mA

Product Status :

Active

Vgs(th) (Max) @ Id :

2V @ 1mA

Configuration :

Single

Continuous Drain Current Id :

410

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Mounting :

Through Hole

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Subcategory :

MOSFETs

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

60V

Rad Hardened :

No

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Supplier Device Package :

TO-39

Type :

Power MOSFET

Number of Pins :

3

FET Feature :

--

Min Operating Temperature :

-55°C

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4

Power Dissipation (Max) :

6.25W (Tc)

Current :

11A

Mounting Type :

Through Hole

Channel Type :

N

Feedback Cap-Max (Crss) :

10 pF

Drain Current-Max (Abs) (ID) :

2 A

Input Capacitance :

50pF

Number of Elements :

1

Factory Lead Time :

6 Weeks