2N6660

Manufacturer :

Solid State Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

6.25W Tc

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

2 A

Min Operating Temperature :

-55°C

Gate-Source Voltage (Max) :

±20(V)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

3 Ω

Number of Pins :

3

Channel Mode :

Enhancement

Brand :

Microchip Technology / Atmel

Power Dissipation :

6.25W

Turn On Delay Time :

10 ns

Rds On Max :

3 Ω

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current :

0.41(A)

Turn-Off Delay Time :

10 ns

FET Feature :

--

Subcategory :

MOSFETs

JESD-609 Code :

e4

Supplier Device Package :

TO-39

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Package :

Bag

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Lead Free :

Lead Free

HTS Code :

8541.90.00.00

Configuration :

Single

Continuous Drain Current Id :

410

Additional Feature :

HIGH INPUT IMPEDANCE

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Number of Terminals :

3

Polarity :

N

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Package Type :

TO-39

RoHS :

Details

Operating Temp Range :

-55C to 150C

Maximum Operating Temperature :

+ 150 C

Mounting :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Gold

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Radiation Hardening :

No

Drain to Source Resistance :

3Ohm

Max Operating Temperature :

150°C

Drain-Source On-Volt :

60(V)

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

JESD-30 Code :

O-MBCY-W3

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

60 V

Packaging :

Bulk

Rad Hardened :

No

Operating Temperature Classification :

Military

JEDEC-95 Code :

TO-39

Vgs (Max) :

±20V

Current :

11A

Mount :

Through Hole

Manufacturer :

Microchip

Gate to Source Voltage (Vgs) :

20V

Series :

--

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

10 pF

Product Status :

Active

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-205AD, TO-39-3 Metal Can

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 24V

Product Category :

MOSFET

Qualification Status :

Not Qualified

Terminal Form :

Wire

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max (Abs) :

6.25 W

Type :

Power MOSFET

Channel Type :

N

Continuous Drain Current (ID) :

410mA

Input Capacitance :

50pF

Reach Compliance Code :

Compliant

Package Shape :

Round

Number of Channels :

1

Voltage :

60V

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

6.25W (Tc)

Terminal Finish :

NICKEL GOLD

Mounting Style :

Through Hole