2N6660JTX02

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

725mW

Packaging :

Tube

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

990mA

Published :

2016

ECCN Code :

EAR99

Power Dissipation-Max :

725mW Ta 6.25W Tc

Rds On (Max) @ Id, Vgs :

3 Ω @ 1A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Drain-source On Resistance-Max :

3Ohm

Vgs (Max) :

±20V

Terminal Form :

Wire

Current - Continuous Drain (Id) @ 25°C :

990mA Tc

Pin Count :

2

Package / Case :

TO-205AD, TO-39-3 Metal Can

DS Breakdown Voltage-Min :

60V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.99A

Number of Pins :

3

Transistor Application :

AMPLIFIER