2N6660-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Nominal Vgs :

1.7 V

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.7V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation :

725mW

Current - Continuous Drain (Id) @ 25°C :

990mA Tc

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Pin Count :

2

Factory Lead Time :

9 Weeks

Element Configuration :

Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1.1A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

3Ohm

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

0.99A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Published :

2007

Rds On (Max) @ Id, Vgs :

3 Ω @ 1A, 10V

Mount :

Through Hole

Power Dissipation-Max :

725mW Ta 6.25W Tc

Number of Channels :

1

Additional Feature :

LOW THRESHOLD

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-205AD, TO-39-3 Metal Can

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

REACH SVHC :

Unknown

Length :

9.4mm

Radiation Hardening :

No

Height :

6.6mm

Width :

8.15mm

Pbfree Code :

yes

Number of Pins :

3

Terminal Form :

Wire

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Vgs (Max) :

±20V

Mounting Type :

Through Hole